ON Semiconductor SI9945DY

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3.3

Maximum Drain Source Resistance (MOhm)

100@10V

Typical Gate Charge @ Vgs (nC)

13@10V

Typical Gate Charge @ 10V (nC)

13

Typical Input Capacitance @ Vds (pF)

345@25V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

7

Typical Rise Time (ns)

7.5

Typical Turn-Off Delay Time (ns)

20

Typical Turn-On Delay Time (ns)

5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.65(Max)

Package Width

3.9

Package Length

4.9

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

双排双泄

信道型

N