Samsung Semiconductor K4A4G085WD-BIRC
- 收藏
- 对比
K4A4G085WD-BIRC
2107-K4A4G085WD-BIRC
存储器
--
大陆
立即发货

K4A4G085WD-BIRC datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4A4G085WD-BIRC详情
Samsung Semiconductor K4A4G085WD-BIRC重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR4 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
16
Number of Bits/Word (bit)
8
Data Bus Width (bit)
8
Maximum Clock Rate (MHz)
1067
Maximum Access Time (ns)
18
Address Bus Width (bit)
17
Minimum Operating Supply Voltage (V)
1.14
Typical Operating Supply Voltage (V)
1.2
Maximum Operating Supply Voltage (V)
1.26
Operating Current (mA)
104
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
8
Mounting
表面贴装
Package Width
7.5
Package Length
11
PCB changed
78
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
Obsolete
引脚数量
78
组织结构
512Mx8
K4A4G085WD-BIRC拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。