Samsung Semiconductor K4A4G085WE-BCRC000
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K4A4G085WE-BCRC000
2107-K4A4G085WE-BCRC000
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K4A4G085WE-BCRC000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4A4G085WE-BCRC000详情
Samsung Semiconductor K4A4G085WE-BCRC000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Maximum Operating Supply Voltage (V)
1.26
Typical Operating Supply Voltage (V)
1.2
Minimum Operating Supply Voltage (V)
1.14
Data Bus Width (bit)
8
Number of Bits/Word (bit)
8
Number of Words per Bank
32M
Number of Internal Banks
16
Chip Density (bit)
4G
DRAM Type
DDR4 SDRAM
ECCN (US)
EAR99
零件状态
Obsolete
组织结构
512Mx8
K4A4G085WE-BCRC000拓展信息
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哦! 它是空的。