Samsung Semiconductor K4A4G085WE-BIRC0CV

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

DRAM Type

DDR4 SDRAM

Chip Density (bit)

4G

Number of Internal Banks

16

Number of Words per Bank

32M

Number of Bits/Word (bit)

8

Data Bus Width (bit)

8

Maximum Clock Rate (MHz)

2400

Maximum Access Time (ns)

0.175

Address Bus Width (bit)

17

Interface Type

POD

Minimum Operating Supply Voltage (V)

1.14

Typical Operating Supply Voltage (V)

1.2

Maximum Operating Supply Voltage (V)

1.26

Operating Current (mA)

90

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Industrial

Number of I/O Lines (bit)

8

Mounting

表面贴装

Package Width

7.5

Package Length

11

PCB changed

78

Supplier Package

FBGA

零件状态

活跃

引脚数量

78

组织结构

512Mx8