Samsung Semiconductor K4A4G085WE-BIRCTCV
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K4A4G085WE-BIRCTCV
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K4A4G085WE-BIRCTCV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4A4G085WE-BIRCTCV详情
Samsung Semiconductor K4A4G085WE-BIRCTCV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR4 SDRAM
Chip Density (bit)
4G
Supplier Package
FBGA
PCB changed
78
Package Length
11
Package Width
7.5
Mounting
表面贴装
Number of I/O Lines (bit)
8
Supplier Temperature Grade
Industrial
Maximum Operating Temperature (°C)
95
Minimum Operating Temperature (°C)
-40
Operating Current (mA)
90
Maximum Operating Supply Voltage (V)
1.26
Typical Operating Supply Voltage (V)
1.2
Minimum Operating Supply Voltage (V)
1.14
Interface Type
POD
Address Bus Width (bit)
17
Maximum Access Time (ns)
0.175
Maximum Clock Rate (MHz)
2400
Data Bus Width (bit)
8
Number of Bits/Word (bit)
8
Number of Words per Bank
32M
Number of Internal Banks
16
零件状态
活跃
引脚数量
78
组织结构
512Mx8
K4A4G085WE-BIRCTCV拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。