Samsung Semiconductor K4A4G165WD-BCPB0CV
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K4A4G165WD-BCPB0CV
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K4A4G165WD-BCPB0CV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4A4G165WD-BCPB0CV详情
Samsung Semiconductor K4A4G165WD-BCPB0CV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR4 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
2133
Address Bus Width (bit)
17
Minimum Operating Supply Voltage (V)
1.14
Typical Operating Supply Voltage (V)
1.2
Maximum Operating Supply Voltage (V)
1.26
Number of I/O Lines (bit)
16
零件状态
Obsolete
组织结构
256Mx16
K4A4G165WD-BCPB0CV拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。