Samsung Semiconductor K4A4G165WE-BCPB000

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8542.32.00.36

DRAM Type

DDR4 SDRAM

Chip Density (bit)

4G

Number of Internal Banks

8

Number of Words per Bank

32M

Number of Bits/Word (bit)

16

Data Bus Width (bit)

16

Maximum Clock Rate (MHz)

2133

Address Bus Width (bit)

20

Interface Type

POD

Number of I/O Lines (bit)

16

Supplier Temperature Grade

Commercial

Maximum Operating Temperature (°C)

95

Minimum Operating Temperature (°C)

0

Operating Current (mA)

118

Maximum Operating Supply Voltage (V)

1.26

Typical Operating Supply Voltage (V)

1.2

Minimum Operating Supply Voltage (V)

1.14

零件状态

活跃

组织结构

256Mx16