Samsung Semiconductor K4A4G165WE-BCWE
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K4A4G165WE-BCWE
2107-K4A4G165WE-BCWE
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K4A4G165WE-BCWE datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4A4G165WE-BCWE详情
Samsung Semiconductor K4A4G165WE-BCWE重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8542.32.00.36
Automotive
无
PPAP
无
DRAM Type
DDR4 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
16
Number of Words per Bank
16M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
3200
Interface Type
POD
Typical Operating Supply Voltage (V)
1.2
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
7.5
Package Length
13.3
PCB changed
96
Supplier Package
FBGA
零件状态
活跃
引脚数量
96
组织结构
256Mx16
K4A4G165WE-BCWE拓展信息
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Samsung Semiconductor







哦! 它是空的。