Samsung Semiconductor K4A8G045WB-BCRC

表面安装

YES

终端数量

78

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8542.32.00.36

Automotive

无

PPAP

无

DRAM Type

DDR4 SDRAM

Chip Density (bit)

8G

Number of Internal Banks

16

Number of Words per Bank

128M

Number of Bits/Word (bit)

4

Data Bus Width (bit)

4

Maximum Clock Rate (MHz)

2400

Maximum Access Time (ns)

0.175

Address Bus Width (bit)

19

Interface Type

POD

Minimum Operating Supply Voltage (V)

1.14

Typical Operating Supply Voltage (V)

1.2

Maximum Operating Supply Voltage (V)

1.26

Operating Current (mA)

93

Minimum Operating Temperature (°C)

0

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Commercial

Number of I/O Lines (bit)

4

Mounting

表面贴装

Package Height

0.73

Package Width

7.5

Package Length

11

PCB changed

78

Standard Package Name

BGA

Supplier Package

FBGA

Lead Shape

Ball

Package Description

FBGA, BGA78,9X13,32

Package Style

GRID ARRAY, FINE PITCH

Package Body Material

PLASTIC/EPOXY

Package Equivalence Code

BGA78,9X13,32

Access Time-Max

0.175 ns

Operating Temperature-Max

85 °C

Rohs Code

有

Manufacturer Part Number

K4A8G045WB-BCRC

Clock Frequency-Max (fCLK)

1200 MHz

Supply Voltage-Nom (Vsup)

1.2 V

Package Code

FBGA

Package Shape

RECTANGULAR

Manufacturer

三星半导体

Part Life Cycle Code

Obsolete

Ihs Manufacturer

SAMSUNG SEMICONDUCTOR INC

Risk Rank

5.8

零件状态

活跃

子类别

DRAMs

技术

CMOS

端子位置

BOTTOM

终端形式

BALL

端子间距

0.8 mm

Reach合规守则

compliant

引脚数量

78

JESD-30代码

R-PBGA-B78

资历状况

不合格

电源

1.2 V

温度等级

OTHER

电源电流-最大值

0.2359 mA

组织结构

2Gx4

输出特性

3-STATE

待机电流-最大值

0.015 A

记忆密度

8589934592 bit

I/O类型

COMMON

内存IC类型

DDR DRAM

刷新周期

8192

顺序突发长度

4,8

交错突发长度

4,8