Samsung Semiconductor K4A8G045WB-BCRC000

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8542.32.00.36

DRAM Type

DDR4 SDRAM

Chip Density (bit)

8G

Number of Internal Banks

16

Number of Words per Bank

128M

Number of Bits/Word (bit)

4

Data Bus Width (bit)

4

Maximum Clock Rate (MHz)

1200

Address Bus Width (bit)

19

Interface Type

POD

Minimum Operating Supply Voltage (V)

1.14

Typical Operating Supply Voltage (V)

1.2

Maximum Operating Supply Voltage (V)

1.26

Operating Current (mA)

93

Minimum Operating Temperature (°C)

0

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Commercial

Number of I/O Lines (bit)

4

零件状态

活跃

组织结构

2Gx4