Samsung Semiconductor K4A8G085WB-BIPBT00

ECCN (US)

EAR99

DRAM Type

DDR4 SDRAM

Chip Density (bit)

8G

Number of Internal Banks

16

Number of Words per Bank

64M

Number of Bits/Word (bit)

8

Data Bus Width (bit)

8

Maximum Clock Rate (MHz)

2133

Maximum Access Time (ns)

0.18

Address Bus Width (bit)

18

Interface Type

POD

Minimum Operating Supply Voltage (V)

1.14

Typical Operating Supply Voltage (V)

1.2

Maximum Operating Supply Voltage (V)

1.26

Operating Current (mA)

101

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Industrial

Number of I/O Lines (bit)

8

零件状态

Obsolete

组织结构

1Gx8