Samsung Semiconductor K4A8G165WC-BCPB0CV
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K4A8G165WC-BCPB0CV
2107-K4A8G165WC-BCPB0CV
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K4A8G165WC-BCPB0CV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4A8G165WC-BCPB0CV详情
Samsung Semiconductor K4A8G165WC-BCPB0CV重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
96
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR4 SDRAM
Chip Density (bit)
8G
Number of Internal Banks
8
Number of Words per Bank
64M
Supplier Package
FBGA
PCB changed
96
Package Length
13.3
Package Width
7.5
Mounting
表面贴装
Number of I/O Lines (bit)
16
Maximum Operating Temperature (°C)
95
Minimum Operating Temperature (°C)
0
Operating Current (mA)
128
Maximum Operating Supply Voltage (V)
1.26
Typical Operating Supply Voltage (V)
1.2
Minimum Operating Supply Voltage (V)
1.14
Interface Type
POD
Address Bus Width (bit)
20
Maximum Access Time (ns)
0.18
Maximum Clock Rate (MHz)
2133
Data Bus Width (bit)
16
Number of Bits/Word (bit)
16
零件状态
活跃
组织结构
512Mx16
K4A8G165WC-BCPB0CV拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。