Samsung Semiconductor K4B1G1646E-HCF7000
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K4B1G1646E-HCF7000
2107-K4B1G1646E-HCF7000
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K4B1G1646E-HCF7000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4B1G1646E-HCF7000详情
Samsung Semiconductor K4B1G1646E-HCF7000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
96
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR3 SDRAM
Chip Density (bit)
1G
Number of Internal Banks
8
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
800
Maximum Access Time (ns)
20
Address Bus Width (bit)
16
Interface Type
SSTL_1.5
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
7.5
Package Length
13.3
PCB changed
96
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
Tray
零件状态
Obsolete
组织结构
64Mx16
K4B1G1646E-HCF7000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。