Samsung Semiconductor K4B1G1646I-BYMATCV

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

DRAM Type

DDR3L SDRAM

Chip Density (bit)

1G

Number of Internal Banks

8

Number of Words per Bank

8M

Number of Bits/Word (bit)

16

Data Bus Width (bit)

16

Maximum Clock Rate (MHz)

1866

Maximum Access Time (ns)

0.195

Address Bus Width (bit)

16

Minimum Operating Supply Voltage (V)

1.425|1.283

Typical Operating Supply Voltage (V)

1.5|1.35

Maximum Operating Supply Voltage (V)

1.575|1.45

Operating Current (mA)

134

Minimum Operating Temperature (°C)

0

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Commercial

Number of I/O Lines (bit)

16

零件状态

LTB

组织结构

64Mx16