Samsung Semiconductor K4B2G0846D-HCH9T00

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8542.32.00.36

Automotive

无

PPAP

无

DRAM Type

DDR3 SDRAM

Chip Density (bit)

2G

Number of Internal Banks

8

Number of Words per Bank

32M

Number of Bits/Word (bit)

8

Data Bus Width (bit)

8

Maximum Clock Rate (MHz)

1333

Maximum Access Time (ns)

0.255

Address Bus Width (bit)

18

Interface Type

SSTL_1.5

Minimum Operating Supply Voltage (V)

1.425

Typical Operating Supply Voltage (V)

1.5

Maximum Operating Supply Voltage (V)

1.575

Operating Current (mA)

80

Minimum Operating Temperature (°C)

0

Maximum Operating Temperature (°C)

95

Number of I/O Lines (bit)

8

零件状态

Obsolete

组织结构

256Mx8