Samsung Semiconductor K4B2G0846F-BMMA000

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

DRAM Type

DDR3L SDRAM

Chip Density (bit)

2G

Number of Internal Banks

8

Number of Words per Bank

32M

Number of Bits/Word (bit)

8

Data Bus Width (bit)

8

Maximum Clock Rate (MHz)

1866

Maximum Access Time (ns)

0.195

Address Bus Width (bit)

18

Minimum Operating Supply Voltage (V)

1.425|1.283

Typical Operating Supply Voltage (V)

1.5|1.35

Maximum Operating Supply Voltage (V)

1.575|1.45

Operating Current (mA)

90

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Industrial

Number of I/O Lines (bit)

8

Mounting

表面贴装

Package Width

7.5

Package Length

11

PCB changed

78

Supplier Package

FBGA

零件状态

活跃

引脚数量

78

组织结构

256Mx8