Samsung Semiconductor K4B2G0846F-BYMA0CV
- 收藏
- 对比
K4B2G0846F-BYMA0CV
2107-K4B2G0846F-BYMA0CV
存储器
--
大陆
立即发货

K4B2G0846F-BYMA0CV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4B2G0846F-BYMA0CV详情
Samsung Semiconductor K4B2G0846F-BYMA0CV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
78
Lead Shape
Ball
Supplier Package
FBGA
Standard Package Name
BGA
PCB changed
78
Package Length
11
Package Width
7.5
Mounting
表面贴装
Number of I/O Lines (bit)
8
Supplier Temperature Grade
Commercial
Maximum Operating Temperature (°C)
95
Minimum Operating Temperature (°C)
0
Operating Current (mA)
90
Maximum Operating Supply Voltage (V)
1.575|1.45
Typical Operating Supply Voltage (V)
1.5|1.35
Minimum Operating Supply Voltage (V)
1.425|1.283
Address Bus Width (bit)
18
Maximum Access Time (ns)
0.195
Maximum Clock Rate (MHz)
1866
Data Bus Width (bit)
8
Number of Bits/Word (bit)
8
Number of Words per Bank
32M
Number of Internal Banks
8
Chip Density (bit)
2G
DRAM Type
DDR3L SDRAM
PPAP
无
Automotive
无
ECCN (US)
EAR99
EU RoHS
Compliant
零件状态
活跃
组织结构
256Mx8
K4B2G0846F-BYMA0CV拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。