Samsung Semiconductor K4B2G1646B-HCF7000
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K4B2G1646B-HCF7000
2107-K4B2G1646B-HCF7000
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K4B2G1646B-HCF7000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4B2G1646B-HCF7000详情
Samsung Semiconductor K4B2G1646B-HCF7000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
96
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR3 SDRAM
Chip Density (bit)
2G
Number of Internal Banks
8
Number of Words per Bank
16M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
800
Maximum Access Time (ns)
20
Address Bus Width (bit)
17
Interface Type
SSTL_1.5
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
155
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
0.75
Package Width
9
Package Length
13.3
PCB changed
96
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
Obsolete
组织结构
128Mx16
K4B2G1646B-HCF7000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
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Samsung Semiconductor







哦! 它是空的。