Samsung Semiconductor K4B2G1646F-BCNB000

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8542.32.00.36

DRAM Type

DDR3 SDRAM

Chip Density (bit)

2G

Number of Internal Banks

8

Number of Words per Bank

16M

Number of Bits/Word (bit)

16

Data Bus Width (bit)

16

Maximum Clock Rate (MHz)

2133

Address Bus Width (bit)

17

Interface Type

SSTL_1.5

Minimum Operating Supply Voltage (V)

1.425

Typical Operating Supply Voltage (V)

1.5

Maximum Operating Supply Voltage (V)

1.575

Operating Current (mA)

145

Minimum Operating Temperature (°C)

0

Maximum Operating Temperature (°C)

95

Number of I/O Lines (bit)

16

零件状态

活跃

组织结构

128Mx16