Samsung Semiconductor K4B2G1646F-BFMA03V
- 收藏
- 对比
K4B2G1646F-BFMA03V
2107-K4B2G1646F-BFMA03V
存储器
--
大陆
立即发货

K4B2G1646F-BFMA03V datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4B2G1646F-BFMA03V详情
Samsung Semiconductor K4B2G1646F-BFMA03V重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
供应商未确认
ECCN (US)
EAR99
DRAM Type
DDR3 SDRAM
Chip Density (bit)
2G
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Typical Operating Supply Voltage (V)
1.35
Mounting
表面贴装
Package Width
7.5
Package Length
13.3
PCB changed
96
Supplier Package
FBGA
零件状态
活跃
引脚数量
96
组织结构
128Mx16
K4B2G1646F-BFMA03V拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。