Samsung Semiconductor K4B2G1646F-BMMATCV

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

DRAM Type

DDR3L SDRAM

Chip Density (bit)

2G

Number of Internal Banks

8

Number of Words per Bank

16M

Number of Bits/Word (bit)

16

Data Bus Width (bit)

16

Maximum Clock Rate (MHz)

1866

Maximum Access Time (ns)

0.195

Address Bus Width (bit)

17

Minimum Operating Supply Voltage (V)

1.283|1.425

Typical Operating Supply Voltage (V)

1.35|1.5

Maximum Operating Supply Voltage (V)

1.575|1.45

Operating Current (mA)

134

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Industrial

Number of I/O Lines (bit)

16

Mounting

表面贴装

Package Width

7.5

Package Length

13.3

PCB changed

96

Supplier Package

FBGA

零件状态

LTB

引脚数量

96

组织结构

128Mx16