Samsung Semiconductor K4B4G0846D-BCH90CV
- 收藏
- 对比
K4B4G0846D-BCH90CV
2107-K4B4G0846D-BCH90CV
存储器
--
大陆
立即发货

K4B4G0846D-BCH90CV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4B4G0846D-BCH90CV详情
Samsung Semiconductor K4B4G0846D-BCH90CV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR3 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Number of Words per Bank
64M
Number of Bits/Word (bit)
8
Data Bus Width (bit)
8
Maximum Clock Rate (MHz)
1333
Maximum Access Time (ns)
0.255
Address Bus Width (bit)
19
Interface Type
SSTL_1.5
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
131
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Number of I/O Lines (bit)
8
Mounting
表面贴装
Package Width
7.5
Package Length
11
PCB changed
78
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
活跃
引脚数量
78
组织结构
512Mx8
K4B4G0846D-BCH90CV拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。