Samsung Semiconductor K4B4G0846D-BMK0

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

DRAM Type

DDR3L SDRAM

Chip Density (bit)

4G

Number of Internal Banks

8

Number of Words per Bank

64M

Number of Bits/Word (bit)

8

Data Bus Width (bit)

8

Maximum Clock Rate (MHz)

1600

Maximum Access Time (ns)

0.225

Address Bus Width (bit)

19

Minimum Operating Supply Voltage (V)

1.283

Typical Operating Supply Voltage (V)

1.35

Maximum Operating Supply Voltage (V)

1.45

Operating Current (mA)

68

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Industrial

Number of I/O Lines (bit)

8

Mounting

表面贴装

PCB changed

78

Supplier Package

FBGA

零件状态

活跃

引脚数量

78

组织结构

512Mx8