Samsung Semiconductor K4B4G1646D-BCMA000
- 收藏
- 对比
K4B4G1646D-BCMA000
2107-K4B4G1646D-BCMA000
存储器
--
大陆
立即发货

K4B4G1646D-BCMA000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4B4G1646D-BCMA000详情
Samsung Semiconductor K4B4G1646D-BCMA000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
供应商未确认
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR3 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
1866
Maximum Access Time (ns)
0.195
Address Bus Width (bit)
18
Interface Type
SSTL_1.5
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
134
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
7.5
Package Length
13.3
PCB changed
90
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
RoHS
Compliant
零件状态
Obsolete
最高工作温度
85 °C
最小工作温度
0 °C
引脚数量
90
工作电源电压
1.5 V
访问时间
20 ns
组织结构
256Mx16
地址总线宽度
15 b
密度
4 Gb
最高频率
933 MHz
K4B4G1646D-BCMA000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。