Samsung Semiconductor K4B4G1646D-BCNB0CV
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K4B4G1646D-BCNB0CV
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K4B4G1646D-BCNB0CV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4B4G1646D-BCNB0CV详情
Samsung Semiconductor K4B4G1646D-BCNB0CV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Automotive
无
EU RoHS
Compliant
PCB changed
90
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
PPAP
无
DRAM Type
DDR3 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
2133
Maximum Access Time (ns)
0.18
Address Bus Width (bit)
18
Interface Type
SSTL_1.5
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
149
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
7.5
Package Length
13.3
零件状态
活跃
引脚数量
90
组织结构
256Mx16
K4B4G1646D-BCNB0CV拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。