Samsung Semiconductor K4B4G1646D-BYMA0CV
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K4B4G1646D-BYMA0CV
2107-K4B4G1646D-BYMA0CV
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K4B4G1646D-BYMA0CV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4B4G1646D-BYMA0CV详情
Samsung Semiconductor K4B4G1646D-BYMA0CV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
96
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR3 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
1866
Maximum Access Time (ns)
0.195
Address Bus Width (bit)
18
Minimum Operating Supply Voltage (V)
1.425|1.283
Typical Operating Supply Voltage (V)
1.5|1.35
Maximum Operating Supply Voltage (V)
1.575|1.45
Operating Current (mA)
134
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
0.75
Package Width
7.5
Package Length
13.3
PCB changed
96
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
活跃
组织结构
256Mx16
K4B4G1646D-BYMA0CV拓展信息
Samsung
Samsung
Samsung
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Samsung Semiconductor







哦! 它是空的。