Samsung Semiconductor K4B4G1646E-BMMAT00
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K4B4G1646E-BMMAT00
2107-K4B4G1646E-BMMAT00
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K4B4G1646E-BMMAT00 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4B4G1646E-BMMAT00详情
Samsung Semiconductor K4B4G1646E-BMMAT00重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR3L SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
1866
Maximum Access Time (ns)
0.195
Address Bus Width (bit)
18
Minimum Operating Supply Voltage (V)
1.283|1.425
Typical Operating Supply Voltage (V)
1.35|1.5
Maximum Operating Supply Voltage (V)
1.45|1.575
Operating Current (mA)
131
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Industrial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
7.5
Package Length
13.3
PCB changed
96
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
活跃
引脚数量
96
组织结构
256Mx16
K4B4G1646E-BMMAT00拓展信息
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哦! 它是空的。