Samsung Semiconductor K4B4G1646E-BYMATCV
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K4B4G1646E-BYMATCV
2107-K4B4G1646E-BYMATCV
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K4B4G1646E-BYMATCV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4B4G1646E-BYMATCV详情
Samsung Semiconductor K4B4G1646E-BYMATCV重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
96
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR3L SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Lead Shape
Ball
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
1866
Maximum Access Time (ns)
0.195
Address Bus Width (bit)
18
Minimum Operating Supply Voltage (V)
1.425|1.283
Typical Operating Supply Voltage (V)
1.5|1.35
Maximum Operating Supply Voltage (V)
1.575|1.45
Operating Current (mA)
131
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
7.5
Package Length
13.3
PCB changed
96
Standard Package Name
BGA
Supplier Package
FBGA
零件状态
活跃
组织结构
256Mx16
K4B4G1646E-BYMATCV拓展信息
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哦! 它是空的。