Samsung Semiconductor K4B8G1646D-MMK00CV
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K4B8G1646D-MMK00CV
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K4B8G1646D-MMK00CV datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4B8G1646D-MMK00CV详情
Samsung Semiconductor K4B8G1646D-MMK00CV重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Maximum Operating Supply Voltage (V)
1.45|1.575
Typical Operating Supply Voltage (V)
1.35|1.5
Minimum Operating Supply Voltage (V)
1.283|1.425
Data Bus Width (bit)
16
Number of Bits/Word (bit)
16
Number of Words per Bank
64M
Number of Internal Banks
8
Chip Density (bit)
8G
DRAM Type
DDR3L SDRAM
PPAP
无
Automotive
无
ECCN (US)
EAR99
EU RoHS
Compliant
零件状态
Obsolete
组织结构
512Mx16
K4B8G1646D-MMK00CV拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。