Samsung Semiconductor K4D263238K-VC40000
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K4D263238K-VC40000
2107-K4D263238K-VC40000
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K4D263238K-VC40000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4D263238K-VC40000详情
Samsung Semiconductor K4D263238K-VC40000重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
144
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
GDDR SDRAM
Chip Density (bit)
128M
Number of Internal Banks
4
Number of Words per Bank
1M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
500
Maximum Access Time (ns)
0.6
Address Bus Width (bit)
14
Interface Type
SSTL_2
Minimum Operating Supply Voltage (V)
2.375
Typical Operating Supply Voltage (V)
2.5
Maximum Operating Supply Voltage (V)
2.625
Operating Current (mA)
340
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
65
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
1(Max)
Package Width
12
Package Length
12
PCB changed
144
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
Tray
零件状态
Obsolete
组织结构
8Mx16
K4D263238K-VC40000拓展信息
Samsung
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Samsung Semiconductor







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