Samsung Semiconductor K4F8E304HB-MGCJT
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K4F8E304HB-MGCJT
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K4F8E304HB-MGCJT datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4F8E304HB-MGCJT详情
Samsung Semiconductor K4F8E304HB-MGCJT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
Mobile LPDDR4 SDRAM
Chip Density (bit)
8G
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
32
Data Bus Width (bit)
32
Maximum Clock Rate (MHz)
3733
Interface Type
SSTL_2
Typical Operating Supply Voltage (V)
1.1|1.8
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Extended
Number of I/O Lines (bit)
32
Mounting
表面贴装
Package Width
10
Package Length
15
PCB changed
200
Supplier Package
FBGA
零件状态
Obsolete
引脚数量
200
组织结构
256Mx32
K4F8E304HB-MGCJT拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。