Samsung Semiconductor K4FBE3D4HM-GHCL02V
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K4FBE3D4HM-GHCL02V
2107-K4FBE3D4HM-GHCL02V
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K4FBE3D4HM-GHCL02V datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4FBE3D4HM-GHCL02V详情
Samsung Semiconductor K4FBE3D4HM-GHCL02V重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
HTS
8542.32.00.36
DRAM Type
Mobile LPDDR4 SDRAM
Chip Density (bit)
32G
Number of Bits/Word (bit)
32
Data Bus Width (bit)
32
Maximum Clock Rate (MHz)
4266
Typical Operating Supply Voltage (V)
1.1|1.8
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
105
Number of I/O Lines (bit)
32
Mounting
表面贴装
PCB changed
200
Supplier Package
FPGA
零件状态
活跃
引脚数量
200
组织结构
1Gx32
K4FBE3D4HM-GHCL02V拓展信息
Samsung
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Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。