Samsung Semiconductor K4H511638B-TCB3000

ECCN (US)

EAR99

Automotive

无

PPAP

无

DRAM Type

DDR SDRAM

Chip Density (bit)

512M

Number of Internal Banks

4

Number of Words per Bank

8M

Number of Bits/Word (bit)

16

Data Bus Width (bit)

16

Maximum Clock Rate (MHz)

333

Maximum Access Time (ns)

0.7

Address Bus Width (bit)

15

Interface Type

SSTL_2

Minimum Operating Supply Voltage (V)

2.3

Typical Operating Supply Voltage (V)

2.5

Maximum Operating Supply Voltage (V)

2.7

Operating Current (mA)

405

Minimum Operating Temperature (°C)

0

Maximum Operating Temperature (°C)

70

Supplier Temperature Grade

Commercial

Number of I/O Lines (bit)

16

包装

Tray

零件状态

Obsolete

组织结构

32Mx16