Samsung Semiconductor K4H511638D-ZCB3000
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K4H511638D-ZCB3000
2107-K4H511638D-ZCB3000
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K4H511638D-ZCB3000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4H511638D-ZCB3000详情
Samsung Semiconductor K4H511638D-ZCB3000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Minimum Operating Supply Voltage (V)
2.3
Typical Operating Supply Voltage (V)
2.5
Maximum Operating Supply Voltage (V)
2.7
Mounting
表面贴装
Package Width
10
Package Length
12
PCB changed
60
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
卷带
零件状态
Obsolete
引脚数量
60
组织结构
32Mx16
K4H511638D-ZCB3000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







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