Samsung Semiconductor K4H561638N-LCCCT00
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K4H561638N-LCCCT00
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K4H561638N-LCCCT00 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4H561638N-LCCCT00详情
Samsung Semiconductor K4H561638N-LCCCT00重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR SDRAM
Chip Density (bit)
256M
Number of Internal Banks
4
Number of Words per Bank
4M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Process Technology
CMOS
Minimum Operating Supply Voltage (V)
2.3
Typical Operating Supply Voltage (V)
2.5
Maximum Operating Supply Voltage (V)
2.7
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
零件状态
Obsolete
组织结构
16Mx16
K4H561638N-LCCCT00拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。