Samsung Semiconductor K4M28163PH-BG75000
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K4M28163PH-BG75000
2107-K4M28163PH-BG75000
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K4M28163PH-BG75000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4M28163PH-BG75000详情
Samsung Semiconductor K4M28163PH-BG75000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
54
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
移动 SDRAM
Chip Density (bit)
128M
Number of Internal Banks
4
Number of Words per Bank
2M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
133
Maximum Access Time (ns)
9|6
Address Bus Width (bit)
14
Interface Type
LVCMOS
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.95
Operating Current (mA)
50
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Extended
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
0.6
Package Width
8
Package Length
8
PCB changed
54
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
卷带
零件状态
Obsolete
组织结构
8Mx16
K4M28163PH-BG75000拓展信息
Samsung
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Samsung
Samsung
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Samsung Semiconductor







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