Samsung Semiconductor K4M513233C-DN75000
- 收藏
- 对比
K4M513233C-DN75000
2107-K4M513233C-DN75000
存储器
--
大陆
立即发货

K4M513233C-DN75000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4M513233C-DN75000详情
Samsung Semiconductor K4M513233C-DN75000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
90
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
移动 SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
4M
Number of Bits/Word (bit)
32
Data Bus Width (bit)
32
Maximum Clock Rate (MHz)
133
Maximum Access Time (ns)
5.4|7
Address Bus Width (bit)
15
Interface Type
LVCMOS
Minimum Operating Supply Voltage (V)
2.7
Typical Operating Supply Voltage (V)
3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
150
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Extended
Number of I/O Lines (bit)
32
Mounting
表面贴装
Package Height
0.98
Package Width
11
Package Length
13
PCB changed
90
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
Obsolete
组织结构
16Mx32
K4M513233C-DN75000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。