Samsung Semiconductor K4RAH165VB-BCQK
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K4RAH165VB-BCQK
2107-K4RAH165VB-BCQK
存储器
--
大陆
立即发货

DDR5 DRAM, 1GX16, CMOS, PBGA106, FBGA-106
1最小包装量--
K4RAH165VB-BCQK详情
Samsung Semiconductor K4RAH165VB-BCQK重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
YES
Number of pins
28
终端数量
106
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
1x28
Gross weight
1.62 g
Part Life Cycle Code
活跃
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
FBGA-106
Number of Words
1073741824 words
Number of Words Code
1000000000
Operating Temperature-Max
85 °C
Package Body Material
PLASTIC/EPOXY
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
网格排列
Supply Voltage-Nom (Vsup)
1.1 V
Operating temperature
-40...163°C
端子位置
BOTTOM
终端形式
BALL
功能数量
1
Reach合规守则
unknown
Current rating
1.5A
JESD-30代码
R-PBGA-B106
操作模式
ASYNCHRONOUS
组织结构
1GX16
内存宽度
16
记忆密度
17179869184 bit
内存IC类型
DDR5 DRAM
Rated voltage
60V
个人资料
beryllium copper
Plating thickness
0.75µm
Flammability rating
UL94V-0
K4RAH165VB-BCQK拓展信息
Samsung
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Samsung Semiconductor







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