Samsung Semiconductor K4S161622D-TC60000
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K4S161622D-TC60000
2107-K4S161622D-TC60000
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K4S161622D-TC60000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4S161622D-TC60000详情
Samsung Semiconductor K4S161622D-TC60000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
50
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
SDRAM
Chip Density (bit)
16M
Number of Internal Banks
2
Number of Words per Bank
512K
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
166
Maximum Access Time (ns)
5.5
Address Bus Width (bit)
12
Interface Type
LVTTL
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
150
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
1
Package Width
10.16
Package Length
20.95
PCB changed
50
Supplier Package
TSOP-II
包装
Tray
零件状态
Obsolete
组织结构
1Mx16
K4S161622D-TC60000拓展信息
Samsung
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Samsung Semiconductor







哦! 它是空的。