Samsung Semiconductor K4S161622D-TC8000
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K4S161622D-TC8000
2107-K4S161622D-TC8000
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K4S161622D-TC8000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4S161622D-TC8000详情
Samsung Semiconductor K4S161622D-TC8000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
50
EU RoHS
不合规
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
SDRAM
Chip Density (bit)
16M
Number of Internal Banks
2
Number of Words per Bank
512K
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
125
Maximum Access Time (ns)
6
Address Bus Width (bit)
12
Process Technology
CMOS
Interface Type
LVTTL
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
130
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Lead Shape
Gull-wing
Supplier Package
TSOP-II
Standard Package Name
SOP
PCB changed
50
Package Length
20.95
Package Width
10.16
Package Height
1
Mounting
表面贴装
包装
卷带
零件状态
Obsolete
组织结构
1Mx16
K4S161622D-TC8000拓展信息
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