Samsung Semiconductor K4S281633D-RL75000
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K4S281633D-RL75000
2107-K4S281633D-RL75000
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K4S281633D-RL75000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4S281633D-RL75000详情
Samsung Semiconductor K4S281633D-RL75000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
SDRAM
Chip Density (bit)
128M
Number of Internal Banks
4
Number of Words per Bank
2M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
133
Maximum Access Time (ns)
5.4|7
Address Bus Width (bit)
14
Interface Type
LVCMOS
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
130
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
包装
Tray
零件状态
Obsolete
组织结构
8Mx16
K4S281633D-RL75000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。