Samsung Semiconductor K4S511632M-TC75000
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K4S511632M-TC75000
2107-K4S511632M-TC75000
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K4S511632M-TC75000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4S511632M-TC75000详情
Samsung Semiconductor K4S511632M-TC75000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
54
EU RoHS
不合规
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
133
Maximum Access Time (ns)
5.4
Address Bus Width (bit)
15
Interface Type
LVTTL
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
230
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
1
Package Width
10.16
Package Length
22.62(Max)
PCB changed
54
Standard Package Name
SOP
Supplier Package
TSOP-II
Lead Shape
Gull-wing
零件状态
Obsolete
组织结构
32Mx16
K4S511632M-TC75000拓展信息
Samsung
Samsung
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Samsung
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Samsung
Samsung Semiconductor







哦! 它是空的。