Samsung Semiconductor K4S561632E-TC75T00

表面安装

YES

引脚数

54

终端数量

54

EU RoHS

不合规

ECCN (US)

EAR99

Automotive

无

PPAP

无

DRAM Type

SDRAM

Chip Density (bit)

256M

Number of Internal Banks

4

Number of Words per Bank

4M

Number of Bits/Word (bit)

16

Data Bus Width (bit)

16

Minimum Operating Supply Voltage (V)

3

Typical Operating Supply Voltage (V)

3.3

Maximum Operating Supply Voltage (V)

3.6

Mounting

表面贴装

Package Height

1

Package Width

10.16

Package Length

22.62(Max)

PCB changed

54

Standard Package Name

SOP

Supplier Package

TSOP-II

Lead Shape

Gull-wing

Package Description

TSOP, TSOP54,.46,32

Package Style

SMALL OUTLINE, THIN PROFILE

Moisture Sensitivity Levels

1

Number of Words Code

16000000

Package Body Material

PLASTIC/EPOXY

Package Equivalence Code

TSOP54,.46,32

Reflow Temperature-Max (s)

未说明

Access Time-Max

5.4 ns

Operating Temperature-Max

70 °C

Rohs Code

无

Manufacturer Part Number

K4S561632E-TC75T00

Clock Frequency-Max (fCLK)

133 MHz

Number of Words

16777216 words

Supply Voltage-Nom (Vsup)

3.3 V

Package Code

TSOP

Package Shape

RECTANGULAR

Manufacturer

三星半导体

Part Life Cycle Code

Obsolete

Ihs Manufacturer

SAMSUNG SEMICONDUCTOR INC

Risk Rank

5.69

无铅代码

无

零件状态

Obsolete

子类别

DRAMs

技术

CMOS

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

225

端子间距

0.8 mm

Reach合规守则

compliant

JESD-30代码

R-PDSO-G54

资历状况

不合格

电源

3.3 V

温度等级

COMMERCIAL

电源电流-最大值

0.18 mA

组织结构

16Mx16

输出特性

3-STATE

内存宽度

16

待机电流-最大值

0.002 A

记忆密度

268435456 bit

I/O类型

COMMON

内存IC类型

同步剧

刷新周期

8192

顺序突发长度

1,2,4,8,FP

交错突发长度

1,2,4,8