Samsung Semiconductor K4S641632F-TC75T00
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K4S641632F-TC75T00
2107-K4S641632F-TC75T00
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K4S641632F-TC75T00 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4S641632F-TC75T00详情
Samsung Semiconductor K4S641632F-TC75T00重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
表面贴装
引脚数
54
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
SDRAM
Chip Density (bit)
64M
Number of Internal Banks
4
Number of Words per Bank
1M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
133
Maximum Access Time (ns)
6|5.4
Address Bus Width (bit)
14
Interface Type
LVTTL
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
135
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
1
Package Width
10.16
Package Length
22.62(Max)
PCB changed
54
Standard Package Name
SOP
Supplier Package
TSOP-II
Lead Shape
Gull-wing
Current - Supply (Nom)
135 mA
RoHS
Non-Compliant
包装
卷带
零件状态
Obsolete
最高工作温度
70 °C
最小工作温度
0 °C
电压 - 供电
3.3 V
组织结构
4Mx16
地址总线宽度
14 b
密度
64 Mb
最高频率
133 MHz
电压 - 供电 (最大值)
3.6 V
电压 - 供电 (最小值)
3 V
K4S641632F-TC75T00拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







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