Samsung Semiconductor K4T1G084QJ-BCE6T00
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K4T1G084QJ-BCE6T00
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K4T1G084QJ-BCE6T00 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4T1G084QJ-BCE6T00详情
Samsung Semiconductor K4T1G084QJ-BCE6T00重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
1G
Number of Internal Banks
8
Number of Words per Bank
16M
Number of Bits/Word (bit)
8
Data Bus Width (bit)
8
Maximum Clock Rate (MHz)
667
Maximum Access Time (ns)
0.45
Address Bus Width (bit)
17
Interface Type
SSTL_1.8
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
58
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
8
Mounting
表面贴装
Package Height
0.53 + 0.1(Max)
Package Width
7.5
Package Length
9.5
PCB changed
60
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
活跃
引脚数量
60
组织结构
128Mx8
K4T1G084QJ-BCE6T00拓展信息
Samsung
Samsung
Samsung
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Samsung Semiconductor







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