Samsung Semiconductor K4T1G164QE-HIE6000
- 收藏
- 对比
K4T1G164QE-HIE6000
2107-K4T1G164QE-HIE6000
存储器
--
大陆
立即发货

K4T1G164QE-HIE6000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4T1G164QE-HIE6000详情
Samsung Semiconductor K4T1G164QE-HIE6000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
1G
Number of Internal Banks
8
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
667
Maximum Access Time (ns)
0.45
Address Bus Width (bit)
16
Interface Type
SSTL_1.8
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
115
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Industrial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
7.5
Package Length
12.5
PCB changed
84
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
Tray
零件状态
Obsolete
引脚数量
84
组织结构
64Mx16
K4T1G164QE-HIE6000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。