Samsung Semiconductor K4T51083QQ-BCE6000
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K4T51083QQ-BCE6000
2107-K4T51083QQ-BCE6000
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K4T51083QQ-BCE6000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4T51083QQ-BCE6000详情
Samsung Semiconductor K4T51083QQ-BCE6000重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
60
EU RoHS
供应商未确认
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
16M
Number of Bits/Word (bit)
8
Data Bus Width (bit)
8
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Mounting
表面贴装
Package Width
7.5
Package Length
9.5
PCB changed
60
Supplier Package
FBGA
零件状态
Obsolete
组织结构
64Mx8
K4T51083QQ-BCE6000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。