Samsung Semiconductor K4T51163QC-ZCD5000
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K4T51163QC-ZCD5000
2107-K4T51163QC-ZCD5000
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K4T51163QC-ZCD5000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4T51163QC-ZCD5000详情
Samsung Semiconductor K4T51163QC-ZCD5000重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
底架
表面贴装
引脚数
84
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8542.32.00.28
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
533
Maximum Access Time (ns)
0.5
Address Bus Width (bit)
15
Interface Type
SSTL_1.8
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
160
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
0.8(Max)
Package Width
11
Package Length
13
PCB changed
84
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
RoHS
Compliant
Current - Supply (Nom)
160 mA
包装
卷带
零件状态
Obsolete
最高工作温度
95 °C
最小工作温度
0 °C
电压 - 供电
1.8 V
访问时间
500 ps
组织结构
32Mx16
地址总线宽度
15 b
密度
512 Mb
最高频率
533 MHz
电压 - 供电 (最大值)
1.9 V
电压 - 供电 (最小值)
1.7 V
K4T51163QC-ZCD5000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







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