Samsung Semiconductor K4T51163QE-ZCE6000
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K4T51163QE-ZCE6000
2107-K4T51163QE-ZCE6000
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K4T51163QE-ZCE6000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4T51163QE-ZCE6000详情
Samsung Semiconductor K4T51163QE-ZCE6000重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
84
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8542.32.00.28
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
667
Maximum Access Time (ns)
0.45
Address Bus Width (bit)
15
Interface Type
SSTL_1.8
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
170
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
9
Package Length
13
PCB changed
84
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
零件状态
Obsolete
组织结构
32Mx16
K4T51163QE-ZCE6000拓展信息
Samsung
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Samsung Semiconductor







哦! 它是空的。