Samsung Semiconductor K4T51163QG-HCE6000
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K4T51163QG-HCE6000
2107-K4T51163QG-HCE6000
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K4T51163QG-HCE6000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4T51163QG-HCE6000详情
Samsung Semiconductor K4T51163QG-HCE6000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
667
Maximum Access Time (ns)
0.45
Address Bus Width (bit)
15
Interface Type
SSTL_18
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
165
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
95
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
0.95
Package Width
7.5
Package Length
12.5
PCB changed
84
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
卷带
零件状态
Obsolete
引脚数量
84
组织结构
32Mx16
K4T51163QG-HCE6000拓展信息
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